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VBE20-20NO1 PDF预览

VBE20-20NO1

更新时间: 2024-09-15 02:52:23
品牌 Logo 应用领域
IXYS 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
1页 61K
描述
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

VBE20-20NO1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:R-PUFM-X4针数:4
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.72Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):5.41 V
JESD-30 代码:R-PUFM-X4JESD-609代码:e4
最大非重复峰值正向电流:75 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:2000 V
最大反向恢复时间:0.07 µs子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:SILVER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VBE20-20NO1 数据手册

  
VBE 20  
IdAV = 20 A  
VRRM = 2000 V  
Single Phase  
Rectifier Bridge  
with Fast Recovery Epitaxial Diodes (FRED)  
trr  
= 70 ns  
1
5
5
VRSM  
V
VRRM  
V
Type  
1
10  
6
2000  
2000  
VBE 20-20NO1  
10  
6
Symbol  
IdAV  
Conditions  
TC = 65°C, module  
Maximum Ratings  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Leads suitable for PC board soldering  
Creeping and creepage-distance  
fulfil UL 508/CSA 22.2NO14 and  
VDE 0160 requirements  
Epoxy meets UL94V-O  
UL listing applied for  
20  
75  
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 10 ms (50 Hz), sine  
t = 10 ms (50 Hz), sine  
65  
A
I2dt  
TVJ = 45°C  
VR = 0  
28  
21  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
Applications  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Output filter for PWM inverter  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Advantages  
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA t = 1 s  
3000  
3600  
V~  
V~  
Reduced EMI/RFI  
Easy to mount with two screws  
Space and weight savings  
Md  
Mounting torque (M5)  
(10-32UNF)  
2 - 2.5  
18 - 22  
Nm  
lb.in.  
Improved temperature and power  
cycling  
Weight  
typ.  
35  
g
Dimensions in mm (1 mm = 0.0394")  
Symbol  
IR  
Conditions  
CharacteristicValues  
typ.  
max  
VR = VRRM  
VR = 0.8 VRRM  
TVJ = 25°C  
TVJ = 125°C  
0.75  
7
mA  
mA  
4
VF  
IF = 12 A  
TVJ = 25°C  
5.41  
V
VT0  
rT  
For power-loss calculations only  
3.3  
93  
V
mW  
RthJC  
RthCH  
per diode,  
DC  
1.7  
K/W  
K/W  
0.3  
9
IRM  
trr  
IF = 12 A, -diF/dt = 100 A/ms  
VR = 540 V, L £ 0.05 mH, TVJ = 100°C  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C  
12  
90  
A
70  
ns  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
12.7  
9.4  
50  
mm  
mm  
m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
© 2000 IXYS All rights reserved  
1 - 1  

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