Datasheet > V6KM45DU-M3/I

V6KM45DU-M3/I

更新时间： 2024-11-26 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	135K
描述
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

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中文翻译

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V6KM45DU-M3/I 数据手册

V6KM45DU

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.38 V at I_F= 1.5 A

FEATURES

Available

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

FlatPAK 5 x 6

1 and / or 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

7, 8

5, 6

3 and / or 4

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

click logo to get started

DESIGN SUPPORT TOOLS

Models

MECHANICAL DATA

Available

Case: FlatPAK 5 x 6

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

Base P/NHM3

- halogen-free, RoHS-compliant, and

I_F(AV)

2 x 3 A

45 V

AEC-Q101 qualified

V_RRM

I_FSM

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

80 A

V_Fat I_F= 3 A (T_A= 125 °C)

T_Jmax.

0.44 V

175 °C

M3 and HM3 suffix meets JESD 201 class 2 whisker test 



Package

FlatPAK 5 x 6

Circuit configuration

Separated cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V6KM45DU

UNIT

Device marking code

V6M45D

Maximum repetitive peak reverse voltage

Maximum DC forward current per diode

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

(2)

Revision: 26-Jul-2018

Document Number: 87417

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与V6KM45DU-M3/I相关器件

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V6P22CHM3/H	VISHAY	获取价格	Rectifier Diode,
V6P22CHM3/I	VISHAY	获取价格	Rectifier Diode,
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V6PW10	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
V6PW10C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V6PW12	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
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