5秒后页面跳转
V6KM45DU-M3/I PDF预览

V6KM45DU-M3/I

更新时间: 2024-11-06 02:51:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 135K
描述
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

V6KM45DU-M3/I 数据手册

 浏览型号V6KM45DU-M3/I的Datasheet PDF文件第2页浏览型号V6KM45DU-M3/I的Datasheet PDF文件第3页浏览型号V6KM45DU-M3/I的Datasheet PDF文件第4页浏览型号V6KM45DU-M3/I的Datasheet PDF文件第5页 
V6KM45DU  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount  
Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.38 V at IF = 1.5 A  
FEATURES  
1
2
Available  
• Trench MOS Schottky technology  
3
• Low forward voltage drop, low power losses  
4
• High efficiency operation  
8
7
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
6
5
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
FlatPAK 5 x 6  
1 and / or 2  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
7, 8  
5, 6  
3 and / or 4  
TYPICAL APPLICATIONS  
For use in low voltage high frequency DC/DC converters,  
freewheeling diodes, and polarity protection applications.  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
MECHANICAL DATA  
Available  
Case: FlatPAK 5 x 6  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
PRIMARY CHARACTERISTICS  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
IF(AV)  
2 x 3 A  
45 V  
AEC-Q101 qualified  
VRRM  
IFSM  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
80 A  
VF at IF = 3 A (TA = 125 °C)  
TJ max.  
0.44 V  
175 °C  
M3 and HM3 suffix meets JESD 201 class 2 whisker test   
Package  
FlatPAK 5 x 6  
Circuit configuration  
Separated cathode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V6KM45DU  
UNIT  
Device marking code  
V6M45D  
Maximum repetitive peak reverse voltage  
Maximum DC forward current per diode  
VRRM  
45  
3
V
A
(1)  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
80  
A
(2)  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +175  
-55 to +175  
°C  
°C  
TSTG  
Notes  
(1)  
Free air, mounted on recommended pad area  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA  
(2)  
Revision: 26-Jul-2018  
Document Number: 87417  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与V6KM45DU-M3/I相关器件

型号 品牌 获取价格 描述 数据表
V6N3103 VISHAY

获取价格

Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V6P22C VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V6P22CHM3/H VISHAY

获取价格

Rectifier Diode,
V6P22CHM3/I VISHAY

获取价格

Rectifier Diode,
V6P22C-M3/H VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V6P22C-M3/I VISHAY

获取价格

Rectifier Diode,
V6PW10 VISHAY

获取价格

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
V6PW10C VISHAY

获取价格

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V6PW12 VISHAY

获取价格

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
V6PW12C VISHAY

获取价格

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low