V6WM100C-M3
Vishay General Semiconductor
www.vishay.com
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.56 V at IF = 3 A
FEATURES
TMBS®
TO-252 (D-PAK)
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
A
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
V6WM100C
TYPICAL APPLICATIONS
A
A
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 3 A
100 V
75 A
VRRM
IFSM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
VF at IF = 3 A (TA = 125 °C)
TJ max.
0.56 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Package
TO-252 (D-PAK)
M3 suffix meets JESD 201 class 1A whisker test
Diode variation
Dual common cathode
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V6WM100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
6
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
3
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
75
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 04-Dec-13
Document Number: 89969
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000