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V6WM100C-M3 PDF预览

V6WM100C-M3

更新时间: 2022-03-21 20:10:24
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 122K
描述
Dual Trench MOS Barrier Schottky Rectifier

V6WM100C-M3 数据手册

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V6WM100C-M3  
Vishay General Semiconductor  
www.vishay.com  
100  
10  
1
10 000  
1000  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TA = 150 °C  
TA = 125 °C  
TA = 100 °C  
TA = 25 °C  
0.1  
10  
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig. 5 - Typical Junction Capacitance Per Diode  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
100  
10  
Junction to Case  
10  
TA = 150 °C  
1
TA = 125 °C  
TA = 100 °C  
0.1  
0.01  
1
0.001  
TA = 25 °C  
70 80  
0.0001  
0.1  
0.01  
20  
30  
40  
50  
60  
90  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Fig. 6 - Typical Transient Thermal Impedance Per Device  
Fig. 4 - Typical Reverse Characteristics Per Diode  
Revision: 04-Dec-13  
Document Number: 89969  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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