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V6WM100C-M3I PDF预览

V6WM100C-M3I

更新时间: 2024-11-18 12:06:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 122K
描述
Dual Trench MOS Barrier Schottky Rectifier

V6WM100C-M3I 数据手册

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V6WM100C-M3  
Vishay General Semiconductor  
www.vishay.com  
Dual Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.56 V at IF = 3 A  
FEATURES  
TMBS®  
TO-252 (D-PAK)  
• Trench MOS Schottky technology  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
A
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
A
V6WM100C  
TYPICAL APPLICATIONS  
A
A
K
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-252 (D-PAK)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 3 A  
100 V  
75 A  
VRRM  
IFSM  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
VF at IF = 3 A (TA = 125 °C)  
TJ max.  
0.56 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Package  
TO-252 (D-PAK)  
M3 suffix meets JESD 201 class 1A whisker test  
Diode variation  
Dual common cathode  
Polarity: As marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V6WM100C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
6
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
3
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
75  
A
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Revision: 04-Dec-13  
Document Number: 89969  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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