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V6P22C-M3/H PDF预览

V6P22C-M3/H

更新时间: 2024-11-26 02:51:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 104K
描述
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

V6P22C-M3/H 数据手册

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V6P22C  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount  
TMBS® (Trench MOS Barrier Schottky) Rectifier  
Ultra Low VF = 0.61 V at IF = 1.5 A  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMP® Series  
• Ideal for automated placement  
K
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency  
1
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 260 °C  
2
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
SMPC (TO-277A)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Anode 1  
Anode 2  
K
Cathode  
TYPICAL APPLICATIONS  
ADDITIONAL RESOURCES  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters and polarity protection  
applications.  
3
D
3
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMPC (TO-277A)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 3.0 A  
200 V  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
VRRM  
commercial grade  
IFSM  
70 A  
Base P/NHM3  
- halogen-free, RoHS-compliant and  
VF at IF = 3 A  
TJ max.  
0.68 V  
175 °C  
AEC-Q101 qualified  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Package  
SMPC (TO-277A)  
Common cathode  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V6P22C  
UNIT  
Device marking code  
V622C  
200  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF(AV)  
6.0  
Maximum average forward rectified current per device (fig. 1)  
(2)  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
70  
A
(3)  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +175  
-55 to +175  
°C  
°C  
TJ, TSTG  
Notes  
(1)  
(2)  
(3)  
Mounted on 30 mm x 30 mm pad areas aluminum PCB  
Free air, mounted on recommended pad area  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA  
Revision: 14-Oct-2019  
Document Number: 87000  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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