Datasheet > V6WL45C

V6WL45C

更新时间： 2024-11-05 12:36:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
Dual Trench MOS Barrier Schottky Rectifier

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V6WL45C 数据手册

V6WL45C

Vishay General Semiconductor

www.vishay.com

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 3 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-252 (D-PAK)

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

V6WL45C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

HEATSINK

MECHANICAL DATA

Case: TO-252 (D-PAK)

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 3 A

45 V

Base P/N-M3

halogen-free, RoHS-compliant, and

V_RRM

I_FSM

commercial grade

80 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 3 A (T_A= 125 °C)

T_Jmax.

0.34 V

150 °C

Package

TO-252 (D-PAK)

Single

Polarity: As marked

Diode variation

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V6WL45C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Revision: 02-Aug-13

Document Number: 89968

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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