Datasheet > V6N3103

V6N3103

更新时间： 2024-11-26 17:01:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	158K
描述
Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

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V6N3103 数据手册

V6N3103

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

• Low profile package - typical height of 0.88 mm

Available

• Leadless DFN package with side-wettable

flanks suitable for customer AOI (Automatic

Optical Inspection)

• Very low forward voltage drop by TMBS Gen3

technology

DFN33A

• Low power losses, high efficiency

Anode (1)

Anode (2)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

Cathode (K)

Anode (3)

Anode (4)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

EDA / CAD

Packages

Marking

Application

Notes

Documents

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

6 A

MECHANICAL DATA

Case: DFN33A

V_RRM

100 V

I_FSM

100 A

Molding compound meets UL 94 V-0 flammability rating

V_Fat I_F= 3 A (T_J= 125 °C)

T_Jmax.

0.45 V

150 °C

DFN33A

Single

Base P/N-M3

halogen-free, RoHS-compliant, and

commercial grade

Package

Base P/NHM3

- halogen-free, RoHS-compliant, and

Circuit configuration

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Polarity: color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V6N3103

6103

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum average forward rectified current (fig. 1)

(2)

I_F(AV)

2.3

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-55 to +150

°C

T_STG

Notes

(1)

(2)

(3)

With infinite heatsink

Free air, mounted on FR4 PCB, 2 oz., standard footprint

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Revision: 12-Dec-2023

Document Number: 98543

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V6N3103相关器件

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V6P22C	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V6P22CHM3/H	VISHAY	获取价格	Rectifier Diode,
V6P22CHM3/I	VISHAY	获取价格	Rectifier Diode,
V6P22C-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V6P22C-M3/I	VISHAY	获取价格	Rectifier Diode,
V6PW10	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
V6PW10C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V6PW12	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
V6PW12C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V6PW60	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo

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