Datasheet > V60100C_08

V60100C_08

更新时间： 2022-09-14 20:37:31

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	151K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A

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V60100C_08 数据手册

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V60100C & VB60100C

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.573 (14.55)

0.635 (16.13)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

TO-263AB

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

0.190 (4.83)

Mounting Pad Layout

0.42 (10.66) MIN.

0.055 (1.40)

0.045 (1.14)

0.160 (4.06)

0.055 (1.40)

0.047 (1.19)

0.33 (8.38) MIN.

0.360 (9.14)

0.624 (15.85)

0.320 (8.13)

0.591 (15.00)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.037 (0.940)

0.15 (3.81) MIN.

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.140 (3.56)

0.110 (2.79)

0.205 (5.20)

0.195 (4.95)

0.105 (2.67)

0.095 (2.41)

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88942

Revision: 19-May-08

1 2 345

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