V60100C-E3, VI60100C-E3, VB60100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
FEATURES
TO-220AB
TO-262AA
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF
maximum
peak
of
245
°C
3
2
(for D2PAK (TO-263AB) package)
• Low thermal resistance
3
1
2
1
V60100C
VI60100C
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
K
PIN 2
CASE
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D2PAK (TO-263AB)
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
2
1
VB60100C
PIN 1
PIN 2
K
MECHANICAL DATA
Case: TO-220AB, D2PAK (TO-263AB), and TO-262AA
HEATSINK
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
LINKS TO ADDITIONAL RESOURCES
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
3
D
3D Models
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs maximum
IF(AV)
2 x 30 A
VRRM
100 V
320 A
0.66 V
150 °C
IFSM
VF at IF = 30 A
TJ max.
Package
TO-220AB, TO-262AA, D2PAK (TO-263AB)
Circuit configuration
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60100C
VI60100C
VB60100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
60
V
per device
per diode
Maximum average forward rectified current (fig. 1)
IF(AV)
A
30
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
EAS
320
450
1.0
A
mJ
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C
per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Revision: 26-Jun-2023
Document Number: 88942
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000