Datasheet > V60120C_15

V60120C_15

更新时间： 2022-02-26 12:45:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	134K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V60120C_15 数据手册

V60120C, VB60120C

Vishay General Semiconductor

www.vishay.com

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.41 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

TO-263AB

• Low thermal resistance

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V60120C

VB60120C

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

HEATSINK

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 30 A

120 V

MECHANICAL DATA

V_RRM

Case: TO-220AB and TO-263AB

Molding compound meets UL 94 V-0 flammability rating

I_FSM

300 A

Base P/N-E3 - RoHS-compliant, commercial grade

V_Fat I_F= 30 A

T_Jmax.

0.71 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Package

TO-220AB, TO-263AB

Dual common cathode

Diode variations

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60120C

VB60120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

I_FSM

E_AS

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

300

260

Non-repetitive avalanche energy

at T_J= 25 °C, L = 100 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, 

T_J= 38 °C 2 °C per diode

I_RRM

0.5

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 17-Aug-15

Document Number: 88976

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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