Datasheet > V60100P

V60100P

更新时间： 2022-12-16 16:35:18

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	107K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V60100P 数据手册

New Product

V60100P

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.456 V at I = 10 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Solder dip 260 °C, 40 s

TO-247AD (TO-3P)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PIN 2

PIN 1

PIN 3

CASE

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 30 A

V_RRM

100 V

350 A

Case: TO-247AD (TO-3P)

I_FSM

Epoxy meets UL 94V-0 flammability rating

V_Fat I_F= 30 A

T_Jmax.

0.657 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60100P

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (Fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

I_FSM

350

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

1.0

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 88978

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

下载PDF

与V60100P相关器件

型号	品牌	描述	获取价格	数据表
V60100P_15	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V60100P-E3/45	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10	获取价格
V60100PW	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V60100PW_15	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V60100PW-M3-4W	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V6010-28P	ETC	LED Display Driver	获取价格