Datasheet > V60170PW-M3

V60170PW-M3

更新时间： 2022-02-26 14:20:08

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	94K
描述
High efficiency operation

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V60170PW-M3 数据手册

V60170PW-M3

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.52 V at I_F= 10 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TO-3PW

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-3PW

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 30 A

170 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

260 A

V_Fat I_F= 30 A

T_Jmax.

Package

0.65 V

175 °C

TO-3PW

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Diode variation

Dual common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60170PW

UNIT

Maximum repetitive peak reverse voltage

V_RRM

170

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

260

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

Revision: 04-Dec-13

Document Number: 89944

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

下载PDF

与V60170PW-M3相关器件

型号	品牌	描述	获取价格	数据表
V60170PW-M3_15	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V60200PG	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A	获取价格
V60200PG-E3/45	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A	获取价格
V60200PGW	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V60200PGW-M3-4W	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
V6020PGW_15	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格