Datasheet > V60170PW-M3

V60170PW-M3

更新时间： 2024-01-13 21:02:56

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	94K
描述
High efficiency operation

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数据手册

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V60170PW-M3 数据手册

V60170PW-M3

Vishay General Semiconductor

www.vishay.com

10 000

1000

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_A= 175 °C

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

T_A= 25 °C

0.1

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

1000

Junction to Case

100

T_A= 175 °C

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

0.01

0.001

0.0001

T_A= 25 °C

0.1

100

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-3PW

Fig. 6 - Typical Transient Thermal Impedance Per Device

0.645 (16.38)

0.175 (4.45)

0.625 (15.87)

0.165 (4.19)

0.551 (14.00)

0.537 (13.64)

0.050 (1.27)

R0.155 (R3.94)

R0.145 (R3.68)

0.323 (8.20)

0.313 (7.95)

3° Ref.

30° Ref.

0.245 (6.23)

0.225 (5.72)

0.077 (1.96)

0.063 (1.60)

0.170 (4.32)

10° Typ.

Both Sides

0.840 (21.34)

0.820 (20.83)

0.467 (11.86)

0.079 (2.01)

0.453 (11.51)

Ø 0.146 (3.71)

Ø 0.136 (3.45)

0.065 (1.65)

0.160 (4.06)

0.140 (3.56)

5° Ref.

Both Sides

3° Ref.

0.090 (2.29)

0.080 (2.03)

0.098 (2.50)

0.083 (2.12)

0.565 (14.35)

0.545 (13.84)

0.131 (3.33)

0.121 (3.07)

0.048 (1.22)

0.044 (1.12)

0.030 (0.75)

0.020 (0.50)

0.225 (5.72)

0.205 (5.21)

Revision: 04-Dec-13

Document Number: 89944

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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