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V60200PGW-M3-4W PDF预览

V60200PGW-M3-4W

更新时间: 2022-09-14 20:37:19
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
4页 84K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60200PGW-M3-4W 数据手册

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New Product  
V60200PGW  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.54 V at IF = 5 A  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
TO-3PW  
TYPICAL APPLICATIONS  
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
PIN 1  
PIN 3  
PIN 2  
CASE  
MECHANICAL DATA  
Case: TO-3PW  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
2 x 30 A  
200 V  
Base P/N-M3  
- halogen-free and RoHS compliant,  
commercial grade  
300 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
E
AS at L = 60 mH  
VF at IF = 30 A  
TJ max.  
150 mJ  
0.77 V  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V60200PGW  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
200  
60  
V
per device  
per diode  
Maximum average forward rectified curret (fig. 1)  
IF(AV)  
A
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
EAS  
300  
150  
0.5  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode  
Peak repetitive reverse current at tp = 2 μs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
Document Number: 89184  
Revision: 09-Feb-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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