New Product
V60200PGW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TO-3PW
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 30 A
200 V
Base P/N-M3
- halogen-free and RoHS compliant,
commercial grade
300 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
E
AS at L = 60 mH
VF at IF = 30 A
TJ max.
150 mJ
0.77 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60200PGW
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
60
V
per device
per diode
Maximum average forward rectified curret (fig. 1)
IF(AV)
A
30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
EAS
300
150
0.5
A
mJ
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C 2 °C per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89184
Revision: 09-Feb-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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