Datasheet > V60100P

V60100P

更新时间： 2022-12-16 16:35:18

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	107K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A

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V60100P

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

_R= 1.0 mA

T_J= 25 °C

V_BR

100 (minimum)

I_F= 10 A

I_F= 15 A

I_F= 30 A

0.518

0.576

0.730

0.79

Instantaneous forward voltage per diode ⁽¹⁾

V_F

I_F= 10 A

I_F= 15 A

I_F= 30 A

0.456

0.531

0.657

T_J= 125 °C

0.70

T_J= 25 °C

T_J= 125 °C

34.6

9.5

µA

V_R= 80 V

Reverse current per diode ⁽²⁾

I_R

T_J= 25 °C

T_J= 125 °C

82.0

19.2

800

µA

_R= 100 V

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60100P

UNIT

Typical thermal resistance per diode

R_θJC

1.5

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

V60100P-E3/45

6.12

30/tube

Tube

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

Resistive or Inductive Load

D = 0.8

D = 0.5

D = 0.3

D = 0.2

D = 1.0

D = 0.1

D = t_p/T

t_p

125

Case Temperature (°C)

175

100

150

Average Forward Current (A)

Figure 2. Forward Power Loss Characteristics Per Diode

Figure 1. Forward Current Derating Curve

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88978

Revision: 26-May-08

123 4 5

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