是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 1.85 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/404708.1.1.png | Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=404708 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=404708 | 3D View: | https://componentsearchengine.com/viewer/3D.php?partID=404708 |
Samacsys PartID: | 404708 | Samacsys Image: | https://componentsearchengine.com/Images/9/V60100C-E3/4W.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/1/V60100C-E3/4W.jpg | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Diode | Samacsys Package Category: | Transistor Outline, Vertical |
Samacsys Footprint Name: | TO-220AB- | Samacsys Released Date: | 2020-03-04 15:19:55 |
Is Samacsys: | N | 其他特性: | FREE WHEELING DIODE, LOW POWER LOSS |
应用: | EFFICIENCY | 外壳连接: | CATHODE |
配置: | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.58 V |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 320 A |
元件数量: | 2 | 相数: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -40 °C | 最大输出电流: | 30 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 100 V |
子类别: | Rectifier Diodes | 表面贴装: | NO |
技术: | SCHOTTKY | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
V60100C-M3/4W | VISHAY | DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL |
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|
V60100C-M3-4W | VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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|
V60100P | VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 |
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|
V60100P_15 | VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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|
V60100P-E3/45 | VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 |
获取价格 |
|
V60100PW | VISHAY | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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