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V60100C-E3/4W PDF预览

V60100C-E3/4W

更新时间: 2024-02-11 19:57:44
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线高压功效PC局域网
页数 文件大小 规格书
5页 149K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60100C-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.85
Samacsys Confidence:4Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/404708.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=404708
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=4047083D View:https://componentsearchengine.com/viewer/3D.php?partID=404708
Samacsys PartID:404708Samacsys Image:https://componentsearchengine.com/Images/9/V60100C-E3/4W.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/V60100C-E3/4W.jpgSamacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220AB-Samacsys Released Date:2020-03-04 15:19:55
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.58 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:320 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

V60100C-E3/4W 数据手册

 浏览型号V60100C-E3/4W的Datasheet PDF文件第2页浏览型号V60100C-E3/4W的Datasheet PDF文件第3页浏览型号V60100C-E3/4W的Datasheet PDF文件第4页浏览型号V60100C-E3/4W的Datasheet PDF文件第5页 
New Product  
V60100C & VB60100C  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.36 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
TO-263AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Low thermal resistance  
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
3
2
1
V60100C  
VB60100C  
• Solder dip 260 °C, 40 s (for TO-220AB)  
PIN 1  
PIN 2  
K
PIN 1  
PIN 3  
PIN 2  
CASE  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
HEATSINK  
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 30 A  
MECHANICAL DATA  
VRRM  
100 V  
320 A  
0.66 V  
150 °C  
Case: TO-220AB and TO-263AB  
IFSM  
Epoxy meets UL 94V-0 flammability rating  
VF at IF = 30 A  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs Maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V60100C  
VB60100C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
V
per device  
per diode  
60  
30  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
per diode  
IFSM  
320  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 88942  
Revision: 16-Jan-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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