New Product
V60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses
TO-220AB
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
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TYPICAL APPLICATIONS
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V60100C
For use in high frequency converters, switching power
PIN 1
PIN 3
PIN 2
CASE
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
Base P/N-M3
- halogen-free and RoHS compliant,
commercial grade
VRRM
100 V
320 A
0.66 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
IFSM
VF at IF = 30 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60100C
100
UNIT
Maximum repetitive peak reverse voltage
VRRM
V
per device
per diode
60
Maximum average forward rectified current (fig. 1)
IF(AV)
A
30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
EAS
320
450
1.0
A
mJ
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C 2 °C per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89155
Revision: 17-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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