Datasheet > V60100C-M3-4W

V60100C-M3-4W

更新时间： 2022-09-14 20:38:38

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	132K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60100C-M3-4W 数据手册

New Product

V60100C

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

100 (minimum)

0.45

MAX.

UNIT

Breakdown voltage

I_R= 1.0 mA

T_A= 25 °C

V_BR

I_F= 5 A

I_F= 10 A

I_F= 15 A

I_F= 20 A

I_F= 30 A

I_F= 5 A

0.52

0.63

T_A= 25 °C

0.58

0.63

0.73

0.79

(1)

Instantaneous forward voltage per diode

V_F

0.36

I_F= 10 A

I_F= 15 A

I_F= 20 A

I_F= 30 A

0.45

T_A= 125 °C

0.53

0.58

0.66

0.70

500

1000

_A= 25 °C

T_A= 125 °C

_A= 25 °C

T_A= 125 °C

µA

V_R= 80 V

(2)

Reverse current at rated V_Rper diode

I_R

_R= 100 V

Notes

(1)

Pulse test: 300 µs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60100C

UNIT

Typical thermal resistance per diode

R_θJC

2.5

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

V60100C-M3/4W

1.89

50/tube

Tube

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 °C unless otherwise noted)

Resistive or Inductive Load

D = 0.8

D = 0.5

D = 0.3

D = 1.0

D = 0.2

D = 0.1

D = t_p/T

t_p

100

125

150

175

Case Temperature (°C)

Average Forward Current (A)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 89155

Revision: 17-Nov-09

123 4

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