Datasheet > V60100C-M3-4W

V60100C-M3-4W

更新时间： 2022-09-14 20:38:38

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	132K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60100C-M3-4W 数据手册

New Product

V60100C

Vishay General Semiconductor

100

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_A= 150 °C

T_A= 125 °C

1000

100

T_A= 100 °C

T_A= 25 °C

0.1

0.2

0.4

0.6

0.8

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

1000

100

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

T_A= 25 °C

0.01

0.001

0.1

90 100

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.635 (16.13)

0.573 (14.55)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

Document Number: 89155

Revision: 17-Nov-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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