Datasheet > V60100C_12

V60100C_12

更新时间： 2022-03-18 00:53:40

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	146K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60100C_12 数据手册

New Product

V60100C & VB60100C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.36 V at I = 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

TO-263AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

V60100C

VB60100C

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB)

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

CASE

HEATSINK

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 30 A

V_RRM

100 V

320 A

0.66 V

150 °C

MECHANICAL DATA

I_FSM

Case: TO-220AB and TO-263AB

V_Fat I_F= 30 A

T_Jmax.

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60100C

VB60100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

I_FSM

E_AS

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

320

450

Non-repetitive avalanche energy

at T_J= 25 °C, L = 140 mH per diode

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

1.0

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 88942

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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