Datasheet > V40DL45HM3

V40DL45HM3

更新时间： 2024-11-16 01:16:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	116K
描述
Low-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V40DL45HM3 数据手册

V40DL45-M3, V40DL45HM3

www.vishay.com

Vishay General Semiconductor

Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.26 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®eSMP^®Series

TO-263AC (SMPD)

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-263AC (SMPD)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

40 A

45 V

V_RRM

Base P/N-M3

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 40 A (T_A= 125 °C)

T_Jmax.

240 A

0.53 V

150 °C

commercial grade

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Package

TO-263AC (SMPD)

Single die

Diode variations

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40DL45-M3, V40DL45HM3

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

240

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 05-May-15

Document Number: 87790

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V40DL45HM3相关器件

型号	品牌	获取价格	描述	数据表
V40DL45-M3	VISHAY	获取价格	Low-Voltage Trench MOS Barrier Schottky Rectifier
V40DL45-M3_15	VISHAY	获取价格	Low-Voltage Trench MOS Barrier Schottky Rectifier
V40DL63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.3 V at IF
V40DM100C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at I
V40DM103C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at I
V40DM120C	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V40DM120CHM3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V40DM120C-M3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V40DM120C-M3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V40DM150C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at I

与V40DL45HM3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

V40DL45HM3

V40DL45HM3 数据手册

与V40DL45HM3相关器件

与V40DL45HM3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V40DL45HM3

V40DL45HM3 数据手册

与V40DL45HM3相关器件

与V40DL45HM3相关文章

您还可以找

您在本页遇到什么问题？