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V40M120C PDF预览

V40M120C

更新时间: 2024-01-22 02:07:45
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 725K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40M120C 数据手册

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New Product  
V40M120C, VI40M120C  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.46 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
TO-220AB  
TO-262AA  
K
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
3
3
2
2
1
1
TYPICAL APPLICATIONS  
VI40M120C  
V40M120C  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
PIN 1  
PIN 1  
PIN 3  
PIN 2  
K
PIN 2  
CASE  
PIN 3  
MECHANICAL DATA  
Case: TO-220AB and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 20 A  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
VRRM  
120 V  
250 A  
0.64 V  
150 °C  
commercial grade  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 20 A  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V40M120C  
VI40M120C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
120  
40  
V
per device  
Maximum average forward rectified current (fig. 1)  
per diode  
IF(AV)  
20  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
250  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
Revision: 11-Jan-12  
Document Number: 89465  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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