Datasheet > V40PW22C

V40PW22C

更新时间： 2024-11-16 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	135K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 5 A

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V40PW22C 数据手册

V40PW22C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.58 V at I_F= 5 A

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

SlimDPAK (TO-252AE)

- Automotive ordering code: base P/NHM3

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SlimDPAK (TO-252AE)

I_F(AV)

2 x 20 A

200 V

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

V_RRM

I_FSM

240 A

V_Fat I_F= 20 A (T_J= 125 °C)

T_Jmax.

0.75 V

175 °C

(“_X” denotes revision code e.g. A, B,.....)

Package

SlimDPAK (TO-252AE)

Common cathode

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Circuit configuration

M3 and HM3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40PW22C

UNIT

Device marking code

V40PW22C

Maximum repetitive peak reverse voltage

V_RRM

200

(1)

per device

per diode

I_F(AV)

Maximum average forward rectified current (fig. 1)

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

240

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 20-Apr-2023

Document Number: 87007

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与V40PW22C相关器件

型号	品牌	获取价格	描述	数据表
V40PW45C	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW45CHM3/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, DPAK-3/2
V40PW45C-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW60C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V40PWL63C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V40PWM103C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V40PWM10C	VISHAY	获取价格	Low forward voltage drop, low power losses
V40PWM12C	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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