Datasheet > V40PWM63C

V40PWM63C

更新时间： 2024-11-16 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	141K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V40PWM63C 数据手册

V40PWM63C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.40 V at I_F= 5 A

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

SlimDPAK (TO-252AE)

- Automotive ordering code: base P/NHM3

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

I_F(AV)

2 x 20 A

60 V

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

AEC-Q101 qualified

240 A

0.59 V

175 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

V_Fat I_F= 20 A (T_J= 125 °C)

T_Jmax.

Package

SlimDPAK (TO-252AE)

Common cathode

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40PWM63C

UNIT

Device marking code

V40PWM63C

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

(1)

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

240

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 08-Oct-2021

Document Number: 98265

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V40PWM63C相关器件

型号	品牌	获取价格	描述	数据表
V4-1	ETC	获取价格	LAGERBOX MIT KLEINBEHAELTERN L 8.5MM Inhalt pro Packung: 10 Stk.
V410A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
V41103C	VISHAY	获取价格	Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at I
V4113C4C16E100	AMPHENOL	获取价格	Interconnection Device
V4113C4C16E25	AMPHENOL	获取价格	Interconnection Device
V4113C4C16E50	AMPHENOL	获取价格	Interconnection Device
V4113C4C16E75	AMPHENOL	获取价格	Interconnection Device
V4113C4C18E100	AMPHENOL	获取价格	Interconnection Device
V4113C4C18E25	AMPHENOL	获取价格	Interconnection Device
V4113C4C18E50	AMPHENOL	获取价格	Interconnection Device

与V40PWM63C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

7
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

V40PWM63C

V40PWM63C 数据手册

与V40PWM63C相关器件

与V40PWM63C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V40PWM63C

V40PWM63C 数据手册

与V40PWM63C相关器件

与V40PWM63C相关文章

您还可以找

您在本页遇到什么问题？