Datasheet > V40PWM45C

V40PWM45C

更新时间： 2024-11-16 01:13:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	121K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V40PWM45C 数据手册

V40PWM45C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.35 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.3 mm

TMBS^®eSMP^®Series

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SlimDPAK (TO-252AE)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 2

HEATSINK

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

40 A

45 V

MECHANICAL DATA

V_RRM

Case: SlimDPAK (TO-252AE)

I_FSM

V_Fat I_F= 20 A (T_A= 125 °C)

T_Jmax.

240 A

0.52 V

175 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Package

SlimDPAK (TO-252AE)

Common cathode

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Circuit configuration

M3 and HM3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40PWM45C

UNIT

Device marking code

V40PWM45C

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

(1)

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

240

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 01-Jun-17

Document Number: 87691

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V40PWM45C相关器件

型号	品牌	获取价格	描述	数据表
V40PWM45CHM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM45C-M3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM60C	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM60CHM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM60C-M3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM63C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V4-1	ETC	获取价格	LAGERBOX MIT KLEINBEHAELTERN L 8.5MM Inhalt pro Packung: 10 Stk.
V410A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
V41103C	VISHAY	获取价格	Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at I
V4113C4C16E100	AMPHENOL	获取价格	Interconnection Device

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