Datasheet > V40M120C-M3/4W

V40M120C-M3/4W

更新时间： 2024-11-15 08:15:51

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	725K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V40M120C-M3/4W 数据手册

New Product

V40M120C, VI40M120C

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.46 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

TO-262AA

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

VI40M120C

V40M120C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 20 A

Base P/N-M3

- halogen-free, RoHS compliant, and

V_RRM

120 V

250 A

0.64 V

150 °C

commercial grade

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40M120C

VI40M120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Revision: 11-Jan-12

Document Number: 89465

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V40M120C-M3/4W相关器件

型号	品牌	获取价格	描述	数据表
V40M150C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier VF = 0.55 V at IF = 5 A
V40M150CHM3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V40M150C-M3_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V40PW10C	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V40PW10C-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW12C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
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