Datasheet > V40M150CHM3

V40M150CHM3

更新时间： 2024-01-08 16:25:30

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	120K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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数据手册

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V40M150CHM3 数据手册

V40M150C-M3, V40M150CHM3

www.vishay.com

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

V40M150C

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PIN 1

PIN 2

CASE

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_F(AV)

2 x 20 A

150 V

V_RRM

I_FSM

halogen-free, RoHS-compliant, and

160 A

V_Fat I_F= 20 A (T_A= 125 °C)

T_Jmax.

0.75 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

175 °C

TO-220AB

Package

Diode variations

Dual common cathode

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40M150C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

150

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

160

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

°C

Revision: 10-Jan-14

Document Number: 87780

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V40M150CHM3相关器件

型号	品牌	获取价格	描述	数据表
V40M150C-M3	VISHAY	获取价格	Trench MOS Schottky technology
V40M150C-M3_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40PW103C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V40PW10C	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW10CHM3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW10C-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW12C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V40PW15C	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW15CHM3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PW15C-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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