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V40PW12C PDF预览

V40PW12C

更新时间: 2024-11-16 14:54:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 136K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.49 V at IF = 5 A

V40PW12C 数据手册

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V40PW12C  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount  
TMBS® (Trench MOS Barrier Schottky) Rectifier  
Ultra Low VF = 0.49 V at IF = 5 A  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.3 mm  
• Trench MOS Schottky technology  
• Ideal for automated placement  
K
• Low forward voltage drop, low power losses  
• High efficiency operation  
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified available  
SlimDPAK (TO-252AE)  
- Automotive ordering code: base P/NHM3  
PIN 1  
PIN 2  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
HEATSINK  
LINKS TO ADDITIONAL RESOURCES  
TYPICAL APPLICATIONS  
3
D
3
D
For use in low voltage high frequency DC/DC converters,  
freewheeling diodes, and polarity protection applications.  
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SlimDPAK (TO-252AE)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
IF(AV)  
2 x 20 A  
120 V  
VRRM  
IFSM  
VF at IF = 20 A (TA = 125 °C)  
TJ max.  
240 A  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
0.73 V  
150 °C  
AEC-Q101 qualified  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Package  
SlimDPAK (TO-252AE)  
Common cathode  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V40PW12C  
UNIT  
Device marking code  
V40PW12C  
Maximum repetitive peak reverse voltage  
VRRM  
120  
40  
V
A
A
per device  
per diode  
(1)  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
20  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
240  
A
(2)  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +150  
-55 to +150  
°C  
°C  
TSTG  
Notes  
(1)  
With infinite heatsink  
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA  
(2)  
Revision: 17-Mar-2022  
Document Number: 87681  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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