Datasheet > V23990-P768-CY-PM

V23990-P768-CY-PM

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	7183K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-P768-CY-PM

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

1,35

1,75

1,74

1,71

2,05⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 1200 V

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,75

K/W

64,81

81,66

161,48

313,01

4,62

I_RRM

Peak recovery current

Reverse recovery time

Recovered charge

150

t_rr

150

di/dt=3364 A/µs

di/dt=2466 A/µs

Q_r

±15

600

μC

150

9,95

1,92

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

150

3,98

2298

1106

(di_rf/dt)_max

150

08 Sep. 2021 / Revision 3

1 2 3 456 7 8...20

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