Datasheet > V23990-P829-F108

V23990-P829-F108

更新时间： 2024-11-25 01:12:23

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	1801K
描述
Compact and Low Inductance Design

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中文翻译

获取价格

数据手册

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V23990-P829-F108 数据手册

V23990-P829-F10/ F108-PM

preliminary datasheet

flowPACK 1 3rd gen

1200V/50A

Features

flow1 housing

● Compact flow1 housing

● Trench Fieldstop IGBT4 Technology

● Compact and Low Inductance Design

● Built-in NTC

17 mm housing

12 mm housing

Target Applications

Schematic

● Motor Drive

● Power Generation

● UPS

Types

● V23990-P829-F10

● V23990-P829-F108

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

150

103

T_h=80°C

T_c=80°C

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

800

T_jmax

Maximum Junction Temperature

175

°C

Inverter Diode

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

Peak Repetitive Reverse Voltage

DC forward current

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

100

T_h=80°C

T_c=80°C

°C

T_jmax

175

Thermal Properties

T_stg

T_op

Storage temperature

-40…+125

-40…+150

°C

Operation temperature under switching condition

Revision: 3

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中文翻译

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