Datasheet > V23990-P768-CY-PM

V23990-P768-CY-PM

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	7183K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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中文翻译

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V23990-P768-CY-PM

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

1200

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

150

174

±20

P_tot

V_GES

Gate-emitter voltage

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

175

Inverter Diode

V_RRM

Peak repetitive reverse voltage

1200

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

100

127

175

P_tot

°C

T_jmax

Maximum junction temperature

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

490

1200

106

150

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

08 Sep. 2021 / Revision 3

123 4 5 6 7...20

中文翻译

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