Datasheet > V23990-P823-F-P2-14

V23990-P823-F-P2-14

更新时间： 2022-02-26 13:52:09

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
16页	1973K
描述
Trench Fieldstop IGBT3 Technology

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中文翻译

获取价格

数据手册

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V23990-P823-F-P2-14 数据手册

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V23990-P823-F-PM

preliminary datasheet

flowPACK 1 3rd gen

600V/50A

Features

flow1 housing

● Compact flow1 housing

● Trench Fieldstop IGBT3 Technology

● Compact and Low Inductance Design

● AlN substrate for improved performance

● Built-in NTC

Target Applications

Schematic

● Motor Drive

● Power Generation

● UPS

Types

● V23990-P823-F

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

600

T_h=80°C

T_j=T_jmax

T_c=80°C

T_h=80°C

T_c=80°C

T_h=80°C

T_c=80°C

150

139

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

V_GE

±20

t_SC

T_j≤150°C

μs

V_CC

V_GE=15V

360

T_jmax

Maximum Junction Temperature

175

°C

Inverter Diode

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

Peak Repetitive Reverse Voltage

DC forward current

600

T_h=80°C

T_c=80°C

T_h=80°C

T_c=80°C

T_h=80°C

T_c=80°C

T_j=T_jmax

100

109

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

°C

T_jmax

175

Revision: 2

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中文翻译

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