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V23990-P829-F10 PDF预览

V23990-P829-F10

更新时间: 2024-10-29 01:12:23
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
16页 1801K
描述
Compact and Low Inductance Design

V23990-P829-F10 数据手册

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V23990-P829-F10/ F108-PM  
preliminary datasheet  
flowPACK 1 3rd gen  
1200V/50A  
Features  
flow1 housing  
Compact flow1 housing  
Trench Fieldstop IGBT4 Technology  
Compact and Low Inductance Design  
Built-in NTC  
17 mm housing  
12 mm housing  
Target Applications  
Schematic  
Motor Drive  
Power Generation  
UPS  
Types  
V23990-P829-F10  
V23990-P829-F108  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Inverter Transistor  
VCE  
IC  
ICpulse  
Ptot  
Collector-emitter break down voltage  
DC collector current  
1200  
45  
V
A
Th=80°C  
Tc=80°C  
Tj=Tjmax  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
150  
103  
A
Th=80°C  
Tc=80°C  
W
V
VGE  
±20  
tSC  
Tj150°C  
10  
µs  
V
VCC  
VGE=15V  
800  
Tjmax  
Maximum Junction Temperature  
175  
°C  
Inverter Diode  
Tj=25°C  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
DC forward current  
1200  
44  
V
A
Th=80°C  
Tc=80°C  
Tj=Tjmax  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak forward current  
Power dissipation per Diode  
Maximum Junction Temperature  
100  
76  
A
Th=80°C  
Tc=80°C  
W
°C  
Tjmax  
175  
Thermal Properties  
Tstg  
Top  
Storage temperature  
-40…+125  
-40…+150  
°C  
°C  
Operation temperature under switching condition  
copyright by Vincotech  
1
Revision: 3  

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