Datasheet > V23990-P829-F08-3-PM

V23990-P829-F08-3-PM

更新时间： 2024-11-25 01:10:39

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
16页	1499K
描述
Trench Fieldstop IGBT4 technology

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中文翻译

获取价格

数据手册

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V23990-P829-F08-3-PM 数据手册

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V23990-P829-F08x-PM

datasheet

flow PACK 1 3rd gen

Features

1200 V / 50 A

flow 1 12mm housing

● Compact flow 1 housing

● Trench Fieldstop IGBT4 technology

● Compact and low inductance design

● AlN substrate for improved performance

● Built-in NTC

solder pins

Press-fit pins

Schematic

Target applications

● Motor Drive

● Power generation

● UPS

Types

● V23990-P829-F08-PM

● V23990-P829-F08Y-PM

Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Inverter Switch

Collector-emitter voltage

V_CES

I_C

1200

Collector current

T_j= T_jmax

t_plimited by T_jmax

T_s= 80 °C

Repetitive peak collector current

Total power dissipation

Gate-emitter voltage

I _CRM

P_tot

V_GES

150

216

±20

= 80 °C

T_s

T_jT_jmax

t_SC

T_j≤ 150°C

V_GE= 15V

µs

Short circuit ratings

V_CC

800

Maximum Junction Temperature

T_jmax

175

°C

27 Nov. 2015 / Revision 1

12 3 4 5 6 7...16

中文翻译

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与V23990-P829-F08-3-PM相关器件

型号	品牌	获取价格	描述	数据表
V23990-P829-F08-PM	VINCOTECH	获取价格	Trench Fieldstop IGBT4 technology
V23990-P829-F08Y-3-PM	VINCOTECH	获取价格	Trench Fieldstop IGBT4 technology
V23990-P829-F08Y-PM	VINCOTECH	获取价格	Trench Fieldstop IGBT4 technology
V23990-P829-F10	VINCOTECH	获取价格	Compact and Low Inductance Design
V23990-P829-F108	VINCOTECH	获取价格	Compact and Low Inductance Design
V23990-P829-F108-PM	VINCOTECH	获取价格	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P829-F10-PM	VINCOTECH	获取价格	Compact and Low Inductance Design
V23990-P829-F10Y-PM	VINCOTECH	获取价格	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P829-F-PM	VINCOTECH	获取价格	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P829-FY-PM	VINCOTECH	获取价格	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem