Datasheet > V20DL45BP

V20DL45BP

更新时间： 2024-11-21 14:54:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	114K
描述
TMBS? (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.31 V at IF = 5A

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V20DL45BP 数据手册

V20DL45BP

Vishay General Semiconductor

www.vishay.com

TMBS^®(Trench MOS Barrier Schottky) Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.31 V at I_F= 5 A

FEATURES

eSMP^®Series

• Trench MOS Schottky technology

SMPD (TO-263AC)

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Top View

Bottom View

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

Cathode

LINKS TO ADDITIONAL RESOURCES

MECHANICAL DATA

Case: SMPD (TO-263AC)

3D Models

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

commercial grade

- halogen-free, RoHS-compliant, and

PRIMARY CHARACTERISTICS

I_F(AV)

20 A

45 V

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

V_RRM

I_FSM

160 A

V_Fat I_F= 20 A (T_A= 125 °C)

0.50 V

Polarity: as marked

_OPmax. (AC model)

150 °C

T_Jmax. (DC forward current)

Package

200 °C

SMPD (TO-263AC)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20DL45BP

UNIT

Maximum repetitive peak reverse voltage

V_RRM

(1)

Maximum DC forward current (fig. 1)

I_F(DC)

Peak forward surge current 10 ms single half sine-wave superimposed on

rated load

I_FSM

160

Operating junction temperature range (AC model)

T_OP

-40 to +150

°C

(2)

Junction temperature in DC forward current without reverse bias, t = ≤ 1 h

T_J

≤ 200

Note

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed.2 bypass diode thermal test

Revision: 18-Nov-2020

Document Number: 87787

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V20DL45BP相关器件

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V20DL63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF
V20DM100C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at I
V20DM103C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at I
V20DM120	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at I
V20DM120C	VISHAY	获取价格	Dual TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A
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