Datasheet > V20DM45C

V20DM45C

更新时间： 2023-12-06 20:03:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	105K
描述
Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.4 V at IF = 5.0 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V20DM45C 数据手册

V20DM45C

Vishay General Semiconductor

www.vishay.com

Dual Low-Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.4 V at I_F= 5.0 A

FEATURES

eSMP^®Series

SMPD (TO-263AC)

Available

• Trench MOS Schottky technology

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available:

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

DESIGN SUPPORT TOOLS AVAILABLE

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, industrial, and

automotive application.

3D Models

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 10 A

45 V

Case: SMPD (TO-263AC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3 - halogen-free, RoHS-compliant

I_FSM

V_Fat I_F= 10 A (T_A= 125 °C)

T_Jmax.

150 A

0.46 V

175 °C

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Package

SMPD (TO-263AC)

Common cathode

Circuit configuration

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20DM45C

UNIT

Device marking code

V20DM45C

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

Mounted on infinite heatsink

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

(2)

Revision: 14-Mar-2019

Document Number: 87585

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V20DM45C相关器件

型号	品牌	获取价格	描述	数据表
V20DM60C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF
V20DM63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF
V20E11P	LITTELFUSE	获取价格	Superior Peak Surge Current Ratings in Small Disc Sizes
V20E130	LITTELFUSE	获取价格	Varistor Products - High Surge Current, Radial Lead
V20E130AUTO	LITTELFUSE	获取价格	RADIAL VARISTOR 20MM ROHS/LEAD F
V20E130AUTO2T	LITTELFUSE	获取价格	RADIAL VARISTOR 20MM ROHS/LEAD F
V20E130L1A	LITTELFUSE	获取价格	RESISTOR, VOLTAGE DEPENDENT, 170V, 100J, THROUGH HOLE MOUNT, RADIAL LEADED
V20E130L1A1	RENESAS	获取价格	RESISTOR, VOLTAGE DEPENDENT, 170V, 100J, THROUGH HOLE MOUNT
V20E130L1A1	LITTELFUSE	获取价格	RESISTOR, VOLTAGE DEPENDENT, 170V, 100J, THROUGH HOLE MOUNT, RADIAL LEADED
V20E130L1A1X2855	LITTELFUSE	获取价格	RESISTOR, VOLTAGE DEPENDENT, 170V, 100J, THROUGH HOLE MOUNT, RADIAL LEADED

与V20DM45C相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

5
高压电解电容的分类与选型策略
2024-06-28

6
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

12

产品中心

服务支持

精选活动

关于我们

帮助中心

V20DM45C

V20DM45C 数据手册

与V20DM45C相关器件

与V20DM45C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V20DM45C

V20DM45C 数据手册

与V20DM45C相关器件

与V20DM45C相关文章

您还可以找

您在本页遇到什么问题？