Datasheet > V20DM120CHM3

V20DM120CHM3

更新时间： 2024-11-19 01:22:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	101K
描述
Dual Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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V20DM120CHM3 数据手册

V20DM120C-M3, V20DM120CHM3

www.vishay.com

Vishay General Semiconductor

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®eSMP^®Series

• Trench MOS Schottky technology

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

TO-263AC (SMPD)

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available:

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V20DM120C

PIN 1

PIN 2

HEATSINK

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, inductrial, and

automotive application.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 10 A

120 V

MECHANICAL DATA

V_RRM

Case: TO-263AC SMPD

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

I_FSM

V_Fat I_F= 10 A (T_A= 125 °C)

T_Jmax.

120 A

0.65 V

150 °C

Base P/NHM3

- halogen-free, RoHS-compliant, and

Package

TO-263AC (SMPD)

AEC-Q101 qualified

Diode variations

Dual common cathode

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: As marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20DM120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

120

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 06-Feb-15

Document Number: 89989

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与V20DM120CHM3相关器件

型号	品牌	获取价格	描述	数据表
V20DM120C-M3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM150C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at I
V20DM153C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.57 V at I
V20DM45C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.4 V at IF
V20DM60C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF
V20DM63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF
V20E11P	LITTELFUSE	获取价格	Superior Peak Surge Current Ratings in Small Disc Sizes
V20E130	LITTELFUSE	获取价格	Varistor Products - High Surge Current, Radial Lead
V20E130AUTO	LITTELFUSE	获取价格	RADIAL VARISTOR 20MM ROHS/LEAD F
V20E130AUTO2T	LITTELFUSE	获取价格	RADIAL VARISTOR 20MM ROHS/LEAD F

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