Datasheet > V20DL45HM3

V20DL45HM3

更新时间： 2024-11-21 01:19:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	126K
描述
Low-Voltage Trench MOS Barrier Schottky Rectifier

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数据手册

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V20DL45HM3 数据手册

V20DL45-M3, V20DL45HM3

www.vishay.com

Vishay General Semiconductor

Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.31 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®eSMP^®Series

TO-263AC (SMPD)

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-263AC (SMPD)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

20 A

45 V

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 20 A (T_A= 125 °C)

T_Jmax.

160 A

0.50 V

150 °C

- halogen-free, RoHS-compliant, and

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Package

TO-263AC (SMPD)

Single die

Diode variations

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20DL45-M3, V20DL45HM3

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

160

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Note

(1)

With heatsink

Revision: 05-May-15

Document Number: 87786

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V20DL45HM3相关器件

型号	品牌	获取价格	描述	数据表
V20DL45-M3	VISHAY	获取价格	Low-Voltage Trench MOS Barrier Schottky Rectifier
V20DL63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF
V20DM100C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at I
V20DM103C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at I
V20DM120	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at I
V20DM120C	VISHAY	获取价格	Dual TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A
V20DM120CHM3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM120C-M3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM150C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at I
V20DM153C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.57 V at I

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