Datasheet > V20DM100C

V20DM100C

更新时间： 2024-11-19 14:55:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	105K
描述
Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 5.0 A

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V20DM100C 数据手册

V20DM100C

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.53 V at I_F= 5.0 A

FEATURES

eSMP^®Series

SMPD (TO-263AC)

Available

• Trench MOS Schottky technology

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available:

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

DESIGN SUPPORT TOOLS AVAILABLE

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, industrial, and

automotive application.

3D Models

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 10 A

100 V

Case: SMPD (TO-263AC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3 - halogen-free, RoHS-compliant

I_FSM

V_Fat I_F= 10 A (T_A= 125 °C)

T_Jmax.

150 A

Base P/NHM3

- halogen-free, RoHS-compliant, and

0.64 V

175 °C

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Package

SMPD (TO-263AC)

Common cathode

Circuit configuration

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20DM100C

UNIT

Device marking code

V20DM100C

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current

(fig. 1)

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

Mounted on infinite heatsink

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

(2)

Revision: 14-Mar-2019

Document Number: 87575

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V20DM100C相关器件

型号	品牌	获取价格	描述	数据表
V20DM103C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at I
V20DM120	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at I
V20DM120C	VISHAY	获取价格	Dual TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A
V20DM120CHM3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM120C-M3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM150C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at I
V20DM153C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.57 V at I
V20DM45C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.4 V at IF
V20DM60C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF
V20DM63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF

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