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V20DM120 PDF预览

V20DM120

更新时间: 2023-12-06 20:08:09
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 119K
描述
Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at IF = 5 A

V20DM120 数据手册

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V20DM120  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier  
Ultra Low VF = 0.52 V at IF = 5 A  
FEATURES  
eSMP® Series  
SMPD (TO-263AC)  
Available  
• Trench MOS Schottky technology generation 2  
• Very low profile - typical height of 1.7 mm  
• Ideal for automated placement  
K
• Low forward voltage drop, low power losses  
• High efficiency operation  
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
Top View  
Bottom View  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Anode 1  
Anode 2  
K
Cathode  
TYPICAL APPLICATIONS  
LINKS TO ADDITIONAL RESOURCES  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection in commercial, industrial, and  
automotive application.  
3
D
3
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMPD (TO-263AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
IF(AV)  
20 A  
120 V  
150 A  
0.71 V  
175 °C  
VRRM  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
IFSM  
VF at IF = 20 A (TA = 125 °C)  
TJ max.  
AEC-Q101 qualified  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Package  
SMPD (TO-263AC)  
Single  
Circuit configuration  
Polarity: as marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V20DM120  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
120  
20  
V
(1)  
IF(AV)  
Maximum DC forward rectified current (fig. 1)  
A
(2)  
IF(AV)  
5.5  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +175  
°C  
Notes  
(1)  
With infinite heatsink  
With recommended pad size, 2 oz FR4 PCB  
(2)  
Revision: 27-Mar-2020  
Document Number: 87601  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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