Datasheet > V20DM120

V20DM120

更新时间： 2024-11-19 14:54:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	119K
描述
Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at IF = 5 A

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V20DM120 数据手册

V20DM120

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.52 V at I_F= 5 A

FEATURES

eSMP^®Series

SMPD (TO-263AC)

Available

• Trench MOS Schottky technology generation 2

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, industrial, and

automotive application.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPD (TO-263AC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

I_F(AV)

20 A

120 V

150 A

0.71 V

175 °C

V_RRM

Base P/NHM3

- halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 20 A (T_A= 125 °C)

T_Jmax.

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPD (TO-263AC)

Single

Circuit configuration

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20DM120

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

(1)

I_F(AV)

Maximum DC forward rectified current (fig. 1)

(2)

I_F(AV)

5.5

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

°C

Notes

(1)

With infinite heatsink

With recommended pad size, 2 oz FR4 PCB

(2)

Revision: 27-Mar-2020

Document Number: 87601

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V20DM120相关器件

型号	品牌	获取价格	描述	数据表
V20DM120C	VISHAY	获取价格	Dual TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A
V20DM120CHM3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM120C-M3	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
V20DM150C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at I
V20DM153C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.57 V at I
V20DM45C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.4 V at IF
V20DM60C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF
V20DM63C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF
V20E11P	LITTELFUSE	获取价格	Superior Peak Surge Current Ratings in Small Disc Sizes
V20E130	LITTELFUSE	获取价格	Varistor Products - High Surge Current, Radial Lead

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