Datasheet > UPT10RE3

UPT10RE3

更新时间： 2024-11-24 15:56:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
3页	157K
描述
Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

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技术参数
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替代型号

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UPT10RE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-216AA
包装说明：	ROHS COMPLIANT, PLASTIC, POWERMITE-2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.39
Is Samacsys：	N	其他特性：	LOW LEAKAGE CURRENT
最小击穿电压：	11 V	外壳连接：	CATHODE
最大钳位电压：	18 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-216AA	JESD-30 代码：	S-PDSO-G1
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	1000 W	元件数量：	1
端子数量：	1	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	2.5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	10 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	MATTE TIN OVER COPPER	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

UPT10RE3 数据手册

UPT5Re3 – UPT48Re3

UPTB5e3 – UPTB48e3

SURFACE MOUNT TRANSIENT

VOLTAGE SUPPRESSORS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

Microsemi’s new Powermite UPT series transient voltage suppressors

feature oxide-passivated chips, with high-temperature solder bonds for high

surge capability, and negligible electrical degradation under repeated surge

conditions. Both unidirectional and bidirectional configurations are available.

In addition to its size advantages, Powermite package includes a full

metallic bottom (cathode) that eliminates the possibility of solder flux

entrapment at assembly and a unique locking tab serving as an integral heat

sink.

DO-216AA

Innovative design makes this device fully compatible for use with automatic

insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Powermite Package with standoff voltages 5 to 48 V

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Both unidirectional and Bidirectional Versions

Available as “UPTR” and “UPTB” respectively

Protection from switching transients & induced

•

Peak Pulse Power 1000 W for 8/20 µs pulse

Clamping Time in pico-seconds

New improved lower leakage current for the

UPT5R & UPT5B

Integral heat sink / locking tabs

Compliant to IEC61000-4-2 and IEC61000-4-4

for ESD and EFT protection respectively

Full metallic bottom eliminates flux entrapment

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, or JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers, e.g. MXUPT15Re3,

MVUPTB28e3, MSPUPT10Re3, etc.

Class 1: UPTR/UPTB5 to 17

Class 2: UPTR/UPTB5 to 12

•

RoHS Compliant with e3 suffix part number

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy compound meeting UL94V-0

FINISH: Annealed matte-Tin plating over copper

and readily solderable per MIL-STD-750, method

2026

POLARITY: Cathode to case (bottom TAB 1)

MARKING: The last three digits of part number,

e.g. UPT5R is T05▪, UPT12R is T12▪, UPT24 is

T24▪, UPTB5 is TB05▪, UPTB12 is B12▪, UPTB24

is B24▪, etc. Please note dot suffix (for e3 suffix)

WEIGHT: 0.016 gram (approximate)

•

Operating and Storage Temperature: –65ºC to

+150ºC

Peak Pulse Power at 8/20 µs (See Figure 1 and 2)

UPT5R & UPT5B:

600 Watts

UPT8R thru UPT48R: 1000 Watts

UPTB8 thru UPTB48: 1000 Watts

•

Peak Pulse Power at 10/1000 µs (See Figure 2).

UPT5R & UPT5B:

100 Watts

UPT8R thru UPT48R: 150 Watts

UPTB8 thru UPTB48: 150 Watts

•

See package dimension on last page

•

Impulse Repetition Rate (duty factor): 0.01%

Tape & Reel option: Standard per EIA-481-B

using 12 mm tape with 3,000 per 7 inch reel or

12,000 per 13 inch reel (add TR7 or TR13 suffix to

part number)

Thermal resistance: 15ºC/W junction to base tab or

240ºC/W junction to ambient when mounted on FR4

PC board with 1 oz copper

•

Steady-State Power: 2.5 Watts (base tab ≤112ºC)

Solder Temperatures: 260ºC for 10 s (maximum)

2-13-2006 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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UPT10RE3 替代型号

型号	品牌	替代类型	描述	数据表
TPD4E001DRLR	TI	功能相似	LOW-CAPACITANCE 4-CHANNEL 【15-kV ESD PROTECTI
TPD3E001DRLR	TI	功能相似	LOW-CAPACITANCE 3-CHANNEL 【15-kV ESD-PROTECTI
TPD2E001DRLR	TI	功能相似	LOW-CAPACITANCE 2-CHANNEL 【15-kV ESD-PROTECTI

与UPT10RE3相关器件

型号	品牌	获取价格	描述	数据表
UPT10RE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10RE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10RTR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10RTR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10RTR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10TR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT12	MICROSEMI	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
UPT12B	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Bidirectional, 1 Element, Silicon,

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