是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-216AA | 包装说明: | R-PDSO-G1 |
针数: | 2 | Reach Compliance Code: | compliant |
风险等级: | 5.47 | Is Samacsys: | N |
其他特性: | LOW LEAKAGE CURRENT | 最小击穿电压: | 11 V |
外壳连接: | CATHODE | 最大钳位电压: | 18 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-216AA |
JESD-30 代码: | R-PDSO-G1 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 150 W | 元件数量: | 1 |
端子数量: | 1 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 2.5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 10 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPT10TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
UPT10TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
UPT10TR7E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
UPT12 | MICROSEMI |
获取价格 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS | |
UPT12B | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, | |
UPT12E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, ROH | |
UPT12E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
UPT12E3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
UPT12RE3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
UPT12RTR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |