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UPT12E3 PDF预览

UPT12E3

更新时间: 2024-11-24 20:03:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 231K
描述
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, POWERMITE-2

UPT12E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, POWERMITE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.45其他特性:TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
最小击穿电压:13.8 V外壳连接:ANODE
最大钳位电压:21.6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PSSO-G1JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1000 W
元件数量:1端子数量:1
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:2.5 W
认证状态:Not Qualified最大重复峰值反向电压:12 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

UPT12E3 数据手册

 浏览型号UPT12E3的Datasheet PDF文件第2页浏览型号UPT12E3的Datasheet PDF文件第3页浏览型号UPT12E3的Datasheet PDF文件第4页浏览型号UPT12E3的Datasheet PDF文件第5页 

UPT12E3 替代型号

型号 品牌 替代类型 描述 数据表
UPT12E3/TR13 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT12RE3/TR7 MICROSEMI

类似代替

Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS