Datasheet > UPG2250T5N-E2

UPG2250T5N-E2

更新时间： 2024-02-11 12:17:03

品牌	Logo	应用领域
CEL		放大器功率放大器蓝牙
页数	文件大小	规格书
12页	309K
描述
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1

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中文翻译

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技术参数
数据手册

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UPG2250T5N-E2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	1.50 X1.50 MM, 0.37 MM HEIGHT, LEAD FREE, PLASTIC, TSON-6	Reach Compliance Code：	unknown
风险等级：	5.12	Is Samacsys：	N
构造：	COMPONENT	最大输入功率 (CW)：	5 dBm
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	6	最大工作频率：	2500 MHz
最小工作频率：	2400 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOLCC6,.06,20	电源：	1.8 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	130 mA	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

UPG2250T5N-E2 数据手册

GaAs INTEGRATED CIRCUIT

µPG2250T5N

1.8 V, POWER AMPLIFIER FOR Bluetooth^TMClass 1

DESCRIPTION

The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1.

This device realizes high efficiency, high gain and high output power.

This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able

to high-density surface mounting.

FEATURES

•

Operating frequency

Supply voltage

Control voltage

Circuit current

: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)

: V^DD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.)

: V^cont= 1.5 to 2.1 V (1.8 V TYP.)

: I^DD= 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm

: P^out= +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm

: GCR = 60 dB TYP. @ V^DD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm

: PAE = 55% TYP. @ V^DD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm

Output power

Gain control range

High efficiency

High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)

APPLICATION

•

Power Amplifier for Bluetooth Class 1

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

G5C

Supplying Form

• Embossed tape 8 mm wide

µPG2250T5N-E2 µPG2250T5N-E2-A 6-pin plastic TSON

(Pb-Free)

• Pin 1, 6 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2250T5N-A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10639EJ01V0DS (1st edition)

Date Published September 2006 NS CP(K)

2006

12 3 4 5 6 7...12

中文翻译

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与UPG2250T5N-E2相关器件

型号	品牌	获取价格	描述	数据表
UPG2250T5N-E2-A	CEL	获取价格	1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
UPG2251T6M-E2-A	RENESAS	获取价格	2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.37 MM HEI
UPG2253T6S	CEL	获取价格	RF FRONT-END IC FOR BluetoothTM CLASS 1
UPG2253T6S-E2	CEL	获取价格	RF FRONT-END IC FOR BluetoothTM CLASS 1
UPG2253T6S-E2-A	CEL	获取价格	RF FRONT-END IC FOR BluetoothTM CLASS 1
UPG2255T6N-E2-A	RENESAS	获取价格	1880 MHz - 1930 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, 1.50 X 1.50 MM, 0.37 MM
UPG2255T6N-E2-A	NEC	获取价格	Narrow Band Low Power Amplifier, 1880MHz Min, 1930MHz Max, 1.50 X 1.50 MM, 0.37 MM HEIGHT,
UPG2301T5L	NEC	获取价格	Narrow Band Medium Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, TSQFN-12
UPG2301T5L-A	RENESAS	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,12PIN,PLASTIC
UPG2301T5L-E2-A	RENESAS	获取价格	2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.37 MM HEI

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