Datasheet > UPG2314T5N-E2

UPG2314T5N-E2

更新时间： 2024-10-30 03:23:19

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
7页	1253K
描述
GaAs HBT INTEGRATED CIRCUIT

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中文翻译

获取价格

数据手册

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UPG2314T5N-E2 数据手册

PRELIMINARY DATA SHEET

GaAs HBT INTEGRATED CIRCUIT

uPG2314T5N

POWER AMPLIFIER FOR Bluetooth^TMClass1

DESCRIPTION

The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for Bluetooth^TMClass1.

This device realizes high efficiency, high gain and high output power by using InGaP HBT.

This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density

surface mounting.

FEATURES

Operating Frequency

: fopt = 2400 to 2500MHz 2450MHz TYP.

: V^CC1,2= 2.7 to 3.6V 3.0V TYP.

: V^cont= 0 to 3.6V 3.0V TYP.

･

Supply Voltage

Control Voltage

: Vbias + Venable = 0 to 3.1V 3.0V TYP.

Circuit Current

Output Power

Gain Control Range

High Efficiency

: ICC = 65mA TYP. @ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm

: P^out= +20.0dBm TYP.@ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm

: GCR = 23dB TYP.@ V^CC1,2= 3.0V, Vbias + Venable = 3.0V, Vcont = 0 to 3.0V, Pin = 0dBm

: PAE = 50 TYP.

･

High-density surface mounting : 6-pin TSON package 1.5

1.5

0.37 mm

APPLICATION

Power Amplifier for Bluetooth^TMClass1

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ORDERING INFORMATION

Part Number

Order Number

Package

Marking

G5D

Supplying Form

uPG2314T5N – E2

6-pin plastic TSON

Pb-Free

Embossed tape 8 mm wide

Pin1,6 face the perforation side of tape

Qty 3kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order : uPG2314T5N

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Document No. PG*****EJW8V0PDS ( 8th edition )

Date Published April 2006 CP(K)

12 3 4 5 6 7

中文翻译

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