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UPG2304TK-E2 PDF预览

UPG2304TK-E2

更新时间: 2024-02-15 22:09:37
品牌 Logo 应用领域
日电电子 - NEC 放大器
页数 文件大小 规格书
10页 58K
描述
L-BAND VCO LOCAL BUFFER AMPLIFIER

UPG2304TK-E2 数据手册

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DATA SHEET  
GaAs HBT INTEGRATED CIRCUIT  
µPG2304TK  
L-BAND VCO LOCAL BUFFER AMPLIFIER  
DESCRIPTION  
The µPG2304TK is GaAs HBT MMIC for VCO local buffer amplifier which were developed for mobile phone and  
another L-band application.  
This device realizes excellent performance by using InGaP HBT. This device is housed in a 6-pin lead-less  
minimold package (1511). And this package is able to high-density surface mounting.  
FEATURES  
Operation frequency  
: fopt1 = 679 to 768 MHz (720 MHz TYP.)  
: fopt2 = 1 270 to 1 371 MHz (1 320 MHz TYP.)  
: VCC = 2.7 to 2.9 V (2.8 V TYP.)  
Supply voltage  
Low current consumption  
Excellent isolation  
: ICC = 3.5 mA TYP.@ VCC = 2.8 V  
: ISL1 = 40 dB TYP. @ fopt1 = 720 MHz, Pin = 4 dBm, VCC = 2.8 V  
: ISL2 = 35 dB TYP. @ fopt2 = 1 320 MHz, Pin = 4 dBm, VCC = 2.8 V  
High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)  
APPLICATION  
VCO Buffer Amplifier etc.  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G3F  
Supplying Form  
Embossed tape 8 mm wide  
µPG2304TK-E2  
6-pin lead-less minimold  
(1511)  
Pin 1, 6 face the perforation side of the tape  
Qty 5 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2304TK  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10162EJ01V0DS (1st edition)  
Date Published May 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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