Datasheet > UPG2314T5N

UPG2314T5N

更新时间： 2024-10-30 03:23:19

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
7页	1253K
描述
GaAs HBT INTEGRATED CIRCUIT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPG2314T5N 数据手册

PRELIMINARY DATA SHEET

GaAs HBT INTEGRATED CIRCUIT

uPG2314T5N

POWER AMPLIFIER FOR Bluetooth^TMClass1

DESCRIPTION

The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for Bluetooth^TMClass1.

This device realizes high efficiency, high gain and high output power by using InGaP HBT.

This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density

surface mounting.

FEATURES

Operating Frequency

: fopt = 2400 to 2500MHz 2450MHz TYP.

: V^CC1,2= 2.7 to 3.6V 3.0V TYP.

: V^cont= 0 to 3.6V 3.0V TYP.

･

Supply Voltage

Control Voltage

: Vbias + Venable = 0 to 3.1V 3.0V TYP.

Circuit Current

Output Power

Gain Control Range

High Efficiency

: ICC = 65mA TYP. @ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm

: P^out= +20.0dBm TYP.@ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm

: GCR = 23dB TYP.@ V^CC1,2= 3.0V, Vbias + Venable = 3.0V, Vcont = 0 to 3.0V, Pin = 0dBm

: PAE = 50 TYP.

･

High-density surface mounting : 6-pin TSON package 1.5

1.5

0.37 mm

APPLICATION

Power Amplifier for Bluetooth^TMClass1

･

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

G5D

Supplying Form

uPG2314T5N – E2

6-pin plastic TSON

Pb-Free

Embossed tape 8 mm wide

Pin1,6 face the perforation side of tape

Qty 3kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order : uPG2314T5N

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Document No. PG*****EJW8V0PDS ( 8th edition )

Date Published April 2006 CP(K)

12 3 4 5 6 7

中文翻译

下载PDF

与UPG2314T5N相关器件

型号	品牌	获取价格	描述	数据表
UPG2314T5N_0607	CEL	获取价格	POWER AMPLIFIER FOR BluetoothTM Class 1
UPG2314T5N-E2	CEL	获取价格	GaAs HBT INTEGRATED CIRCUIT
UPG2314T5N-E2-A	CEL	获取价格	GaAs HBT INTEGRATED CIRCUIT
UPG2314T5N-E2-AZ	RENESAS	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,6PIN,PLASTIC
UPG2315T5T-E2-A	NEC	获取价格	Wireless LAN Circuit, PQCC16, 3 X 3 MM, 0.75 MM HEIGHT, PLASTIC, QFN-16
UPG2318T5N-A	RENESAS	获取价格	UPG2318T5N-A
UPG2318T5N-E2-A	NEC	获取价格	Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 1.50 X 1.50 MM, 0.37 MM HEIGHT,
UPG2318T5N-E2-A	RENESAS	获取价格	2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, 1.50 X 1.50 MM, 0.37 MM
UPG2404T6Q	NEC	获取价格	L-BAND SP3T SWITCH
UPG2404T6Q-A	RENESAS	获取价格	UPG2404T6Q-A