Datasheet > UPG2301TQ-E1

UPG2301TQ-E1

更新时间： 2024-02-14 03:07:54

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
10页	59K
描述
Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, TSON, 12 PIN

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中文翻译

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技术参数
数据手册

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UPG2301TQ-E1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.72
Is Samacsys：	N	构造：	COMPONENT
增益：	23 dB	最大输入功率 (CW)：	10 dBm
JESD-609代码：	e0	最大工作频率：	2500 MHz
最小工作频率：	2400 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	NARROW BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

UPG2301TQ-E1 数据手册

DATA SHEET

GaAs HBT INTEGRATED CIRCUIT

µPG2301TQ

POWER AMPLIFIER FOR Bluetooth ^TMClass 1

DESCRIPTION

The µPG2301TQ is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1.

This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed

in a 10-pin plastic TSON package. And this package is able to high-density surface mounting.

FEATURES

•

Operation frequency : f^opt= 2 400 to 2 500 MHz (2 450 MHz TYP.)

Supply voltage

Control voltage

: V^{CC1, 2}= V^bias= 2.7 to 3.6 V (3.3 V TYP.)

: V^cont= 0 to 3.6 V (2.5 V TYP.)

: V^enable= 0 to 3.1 V (2.9 V TYP.)

•

Circuit current

: I^CC= 120 mA TYP.@ V^{CC1, 2}= V^bias= 3.3 V, V^cont= 2.5 V, V^enable= 2.9 V, Pⁱⁿ= +4 dBm

: P^out(MAX.)= +23 dBm TYP.@ V^{CC1, 2}= V^bias= 3.3 V, V^cont= 2.5 V, V^enable= 2.9 V, Pⁱⁿ= +4 dBm

: GCR = 23 dB TYP.@ V^{CC1, 2}= V^bias= 3.3 V, V^cont= 0 to 2.5 V, V^enable= 2.9 V, Pⁱⁿ= +4 dBm

: G^P= 23 dB TYP.(Reference value)

Maximum power

Gain Control Range

Power gain

High efficiency

Shut down function

: PAE = 50% TYP.(Reference value)

High-density surface mounting :10 pin plastic TSON package (2.4 × 2.55 × 0.6 mm)

APPLICATION

•

Power Amplifier for Bluetooth Class 1 etc.

Wireless LAN etc.

ORDERING INFORMATION

Part Number

Package

Marking

2301

Supplying Form

• Embossed tape 8 mm wide

µPG2301TQ-E1

10-pin plastic TSON

• Pin 5, 6 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2301TQ

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10071EJ01V0DS (1st edition)

Date Published February 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...10

中文翻译

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与UPG2301TQ-E1相关器件

型号	品牌	获取价格	描述	数据表
UPG2301TQ-E1-A	NEC	获取价格	Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, TSON, 12 PIN
UPG2304TK	NEC	获取价格	L-BAND VCO LOCAL BUFFER AMPLIFIER
UPG2304TK-A	NEC	获取价格	Narrow Band Low Power Amplifier, 679MHz Min, 768MHz Max, LEAD-LESS MINIMOLD PACKAGE-6
UPG2304TK-E2	NEC	获取价格	L-BAND VCO LOCAL BUFFER AMPLIFIER
UPG2304TK-E2-A	NEC	获取价格	Narrow Band Low Power Amplifier, 679MHz Min, 768MHz Max, LEAD-LESS MINIMOLD PACKAGE-6
UPG2310TK	CEL	获取价格	GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO
UPG2310TK	NEC	获取价格	Narrow Band Medium Power Amplifier, 2320MHz Min, 2360MHz Max, 1.50 X 1.10 MM, 0.55 MM HEIG
UPG2310TK-A	NEC	获取价格	Narrow Band Medium Power Amplifier, 2320MHz Min, 2360MHz Max, 1.50 X 1.10 MM, 0.55 MM HEIG
UPG2310TK-E2	CEL	获取价格	GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO
UPG2311T5F	CEL	获取价格	GAAS INTEGRATED CIRCUIT

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