UPD4482162GF-C60-A

更新时间： 2024-11-18 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		存储内存集成电路静态存储器
页数	文件大小	规格书
28页	441K
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UPD4482162GF-C60-A 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4482162, 4482182, 4482322, 4482362

8M-BIT CMOS SYNCHRONOUS FAST SRAM

PIPELINED OPERATION

SINGLE CYCLE DESELECT

Description

The µPD4482162 is a 524,288-word by 16-bit, the µPD4482182 is a 524,288-word by 18-bit, µPD4482322 is a 262,144-

word by 32-bit and the µPD4482362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

technology using Full-CMOS six-transistor memory cell.

The µPD4482162, µPD4482182, µPD4482322 and µPD4482362 integrates unique synchronous peripheral circuitry, 2-

bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single

clock input (CLK).

The µPD4482162, µPD4482182, µPD4482322 and µPD4482362 are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The µPD4482162, µPD4482182, µPD4482322 and µPD4482362 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness for high density and low capacitive loading.

Features

• 3.3 V or 2.5 V core supply

• Synchronous operation

• Operating temperature : T_A= 0 to 70 °C (-A44, -A50, -A60, -C60)

T_A= −40 to +85 °C (-A44Y, -A50Y, -A60Y, -C60Y)

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for pipelined operation

• Single-Cycle deselect timing

• All registers triggered off positive clock edge

• 3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4, /BWE (µPD4482322, µPD4482362)

/BW1, /BW2, /BWE (µPD4482162, µPD4482182)

Global write enable : /GW

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M14522EJ3V0DS00 (3rd edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark shows major revised points.

2000

12 3 4 5 6 7...28

中文翻译

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与UPD4482162GF-C60-A相关器件

型号	品牌	获取价格	描述	数据表
UPD4482162GF-C60Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
UPD4482162GF-C60Y-A	NEC	获取价格	暂无描述
UPD4482163	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT
UPD4482163GF-A44	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT
UPD4482163GF-A44	RENESAS	获取价格	暂无描述
UPD4482163GF-A44-A	NEC	获取价格	Cache SRAM, 512KX16, 2.8ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482163GF-A44Y	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT
UPD4482163GF-A44Y	RENESAS	获取价格	Cache SRAM, 512KX16, 2.8ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482163GF-A44Y-A	RENESAS	获取价格	IC,SYNC SRAM,512KX16,CMOS,QFP,100PIN,PLASTIC
UPD4482163GF-A50	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT

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